2SB1079 Просмотр технического описания (PDF) - Renesas Electronics

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2SB1079

Silicon PNP Triple Diffused

Renesas Electronics 

2SB1079

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Base current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

IB

PC * 1

Tj

Tstg

Ratings

Unit

–100

V

–100

V

–7

V

–20

A

–30

A

–3

A

100

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –100 —

voltage

Collector to emitter breakdown V(BRCEO

voltage

–100 —

Collector to emitter sustain

voltage

VCEO(sus) –100 —

Emitter to base breakdown

V(BR)EBO

–7

—

voltage

Collector cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

1000 —

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

Collector to emitter saturation VCE(sat)2 —

—

voltage

Base to emitter saturation

VBE(sat)2

—

—

voltage

Turn on time

Storage time

Note: 1. Pulse Test.

t on

—

0.6

t stg

—

3.5

Max Unit

—

V

—

V

—

V

—

V

–100 µA

–1.0 mA

20000

–2.0 V

–2.5 V

–3.0 V

–3.5 V

—

µs

—

µs

Test conditions

IC = –0.1 mA, IE = 0

IC = –25 mA, RBE = ∞

IC = –200 mA, RBE = ∞*1

IE = –50 mA, IC = 0

VCB = –100 V, IE = 0

VCE = –80 V, RBE = ∞

VCE = –3 V, IC = –10 A*1

IC = –10 A, IB = –20 mA*1

IC = –20 A, IB = –200 mA*1

IC = –10 A, IB1 = –IB2 = –20 mA

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