2SB1103 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1103

Silicon PNP Triple Diffused

Hitachi -> Renesas Electronics 

2SB1103

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to emitter voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

C to E diode forward current

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC * 1

Tj

Tstg

ID*1

Ratings

Unit

–60

V

–60

V

–7

V

–8

A

–12

A

40

W

150

°C

–55 to +150

°C

8

A

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –60

—

voltage

Emitter to base breakdown V(BR)EBO –7

—

voltage

Collector cutoff current

DC current tarnsfer ratio

Collector to emitter saturation

voltage

I CBO

I CEO

hFE

VCE(sat)1

—

—

—

—

1000 —

—

—

VCE(sat)2

—

—

Base to emitter saturation

VBE(sat)1

—

—

voltage

VBE(sat)2

—

—

C to E diode forward voltage VD

—

—

Turn on time

t on

—

0.5

Storage time

t stg

—

3.0

Fall time

tf

—

1.0

Note: 1. Pulse Test.

Max Unit

—

V

—

V

–100 µA

–10 µA

20000

–1.5 V

–3.0

–2.0 V

–3.5

3.0

V

—

µs

—

—

Test conditions

IC = –25 mA, RBE = ∞

IE = –50 mA, IC = 0

VCB = –60 V, IE = 0

VCE = –50 V, RBE = ∞

VCE = –3 V, IC = –4 A*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

IC = –4 A, IB = –8 mA*1

IC = –8 A, IB = –80 mA*1

ID = 8 A*1

IC = –4 A,

IB1 = –IB2 = –8 mA

2

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