2SB1101 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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2SB1101 Datasheet PDF : 6 Pages
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2SB1101, 2SB1102
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
Symbol
VCBO
VCEO
VEBO
IC
I C(peak)
PC * 1
Tj
Tstg
ID*1
Ratings
2SB1101
2SB1102
Unit
–60
–80
V
–60
–80
V
–7
–7
V
–4
–4
A
–8
–8
A
40
40
W
150
150
°C
–55 to +150 –55 to +150 °C
4
4
A
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to emitter
breakdown voltage
V(BR)CEO
Emitter to base
breakdown voltage
V(BR)EBO
Collector cutoff current ICBO
I CEO
DC current tarnsfer ratio hFE
Collector to emitter
saturation voltage
VCE(sat)1
VCE(sat)2
Base to emitter
saturation voltage
VBE(sat)1
VBE(sat)2
C to E diode forward VD
voltage
Turn on time
t on
Storage time
t stg
Fall time
tf
Note: 1. Pulse Test.
2SB1101
Min Typ
–60 —
–7 —
——
——
1000 —
——
——
——
——
——
— 0.8
— 4.0
— 1.0
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
3.0
—
—
—
2SB1102
Min Typ
–80 —
–7 —
——
——
1000 —
——
——
——
——
——
— 0.8
— 4.0
— 1.0
Max
—
—
–100
–10
20000
–1.5
–3.0
–2.0
–3.5
3.0
—
—
—
Unit Test conditions
V IC = –25 mA, RBE = ∞
V IE = –50 mA, IC = 0
µA VCB = –60 V, IE = 0
µA VCE = –50 V, RBE = ∞
VCE = –3 V, IC = –2
A*1
V IC = –2 A, IB = –4
mA*1
IC = –4 A, IB = –40
mA*1
V IC = –2 A, IB = –4
mA*1
IC = –4 A, IB = –40
mA*1
V ID = 4 A
µs IC = –2 A,
IB1 = –IB2 = –4 mA
2
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