2SB1028 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SB1028

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1028

Collector to Emitter Saturation Voltage

vs. Collector Current

–10

IC = 10 IB

Pulse

–1.0

–0.1

–0.01

–1

–10

–100

–1,000

Collector Current IC (mA)

1,000

300

Gain Bandwidth Product vs.

Collector Current

VCE = –5 V

Pulse

100

30

10

–10

–30

–100 –300 –1,000

Collector Current IC (mA)

Collector Output Capacitance

vs. Collector to Base Voltage

100

30

10

3

IE = 0

f = 1 MHz

1

–1

–3

–10

–30 –100

Collector to Base Voltage VCB (V)

4

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