B1026DL Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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B1026DL

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1026

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

VCBO

VCEO

VEBO

IC

i *1

C(peak)

PC * 2

Tj

–120

–100

–5

–1

–2

1

150

Storage temperature

Tstg

–55 to +150

Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%

2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)

Unit

V

V

V

A

A

W

°C

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown

voltage

V(BR)CBO –120 —

Collector to emitter breakdown V(BR)CEO –100 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

DC current transfer ratio

I CBO

—

—

hFE1*1

60

—

hFE2

30

—

Collector to emitter saturation VCE(sat) —

—

voltage

Base to emitter voltage

VBE

—

—

Gain bandwidth product

fT

—

140

Collector output capacitance Cob

—

20

Note: 1. The 2SB1026 is grouped by hFE1 as follows.

Mark

DL

DM

hFE1

60 to 120 100 to 200

Max

—

—

—

–10

200

—

–1

–0.9

—

—

Unit

V

V

V

µA

V

V

MHz

pF

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –100 V, IE = 0

VCE = –5 V, IC = –150 mA

VCE = –5 V,

IC = –500 mA (Pulse test)

IC = –500 mA,

IB = –50 mA (Pulse test)

VCE = –5 V, IC = –150 mA

VCE = –5 V, IC = –150 mA

VCB = –10 V, IE = 0,

f = 1 MHz

See characteristic curves of 2SB1025.

2

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