A1695 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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A1695 Datasheet PDF : 4 Pages
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JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-0.5A
ICBO
Collector cut-off current
VCB=-140V; IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
COB
Output capacitance
VEB=-6V; IC=0
IC=-3A ; VCE=-4V
IE=0 ; VCB=-10V,f=1MHz
fT
Transition frequency
IC=-0.5A ; VCE=-12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=-5A;RL=12Ω
IB1=- IB2=-0.5A
VCC=-60V
hFE Classifications
O
P
Y
50-100 70-140 90-180
Product Specification
2SA1695
MIN TYP. MAX UNIT
-140
V
-0.5
V
-10
μA
-10
μA
50
180
400
pF
20
MHz
0.17
μs
1.86
μs
0.27
μs
2
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