A1671 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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A1671

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCB=-120V; IE=0

VEB=-6V; IC=0

IC=-3A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

‹ hFE classifications

O

P

Y

50-100 70-140 90-180

Product Specification

2SA1671

MIN TYP. MAX UNIT

-120

V

-6

V

-0.5

V

-10 μA

-10 μA

50

180

20

MHz

2

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