A1673 Просмотр технического описания (PDF) - Inchange Semiconductor

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A1673

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-5 A;IB=B -0.5 A

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-3A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=-10A;RL=4Ω

IB1=-IB2=-1A

VCC=-40V

‹ hFE classifications

O

P

Y

50-100 70-140 90-180

Product Specification

2SA1673

MIN TYP. MAX UNIT

-180

V

-2.0

V

-10

μA

-10

μA

50

180

20

MHz

500

pF

0.60

μs

0.90

μs

0.20

μs

2

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