A1670 Просмотр технического описания (PDF) - Inchange Semiconductor

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A1670

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-2 A;IB=B -0.2 A

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE

DC current gain

IC=-2A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-12V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-3A;RL=10Ω

IB1=-IB2=-0.3A

VCC=-30V

Product Specification

2SA1670

MIN TYP. MAX UNIT

-80

V

-1.5

V

-10

μA

-10

μA

50

20

MHz

0.25

μs

0.5

μs

0.1

μs

2

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