A1485 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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A1485

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1485

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–200

V

–200

V

–5

V

–100

mA

200

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –200 —

voltage

Collector to emitter breakdown V(BR)CEO –200 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CEO

—

—

DC current transfer ratio

hFE

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

Note: 1. Pulse test

VBE

—

—

Max Unit

—

V

—

V

—

V

–500 µA

250

–0.5 V

–1.0 V

Test conditions

IC = –10 µA, IE = 0

IC = –0.5 mA, RBE = ∞

IE = –10 µA, IC = 0

VCE = –200 V, RBE = ∞

VCE = –12 V, IC = –2 mA*1

IC = –30 mA, IB = –3 mA*1

VCE = –12 V, IC = –2 mA*1

2

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