2SA1388 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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2SA1388

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SA1388

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=-0.15A

VBEsat Base-emitter saturation voltage

IC=-3A ;IB=-0.15A

ICBO

Collector cut-off current

VCB=-100V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-1V

hFE-2

DC current gain

IC=-3A ; VCE=-1V

fT

Trainsition frequency

IC=-1A ; VCE=-4V

Cob

Collector output capacitance

IE=0; VCE=-10V;f=1MHz

Switching times

ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=-IB2=-0.15A

VCC=30V;RL=10Ω

‹ hFE-1 Classifications

O

Y

70-140

120-240

MIN TYP. MAX UNIT

-80

V

-0.2 -0.4

V

-0.9 -1.2

V

-1

μA

-1

μA

70

240

30

60

MHz

200

pF

0.2

μs

1.0

μs

0.1

μs

2

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