2SA1387 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SA1387

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1387

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=-3A ;IB=B -0.075A

VBEsat Base-emitter saturation voltage

IC=-3A ; IB=-0.075A

ICBO

Collector cut-off current

VCB=-50V; IE=0

IEBO

Emitter cut-off current

VEB=-7V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-1V

hFE-2

DC current gain

IC=-3A ; VCE=-1V

fT

Trainsition frequency

IC=-1A ; VCE=-4V

Cob

Collector output capacitance

IE=0; VCE=-10V;f=1MHz

Switching times

Ton

Turn-on time

ts

Storage time

tf

Fall time

IB1=-IB2=-0.075A

VCC≈-30V;RL=10Ω

MIN TYP. MAX UNIT

-50

V

-0.15 -0.4

V

-0.8 -1.2

V

-1

μA

-1

μA

150

400

70

80

MHz

200

pF

0.2

μs

1.0

μs

0.2

μs

2

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