2SA1384 Просмотр технического описания (PDF) - Toshiba
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2SA1384 Datasheet PDF : 6 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process)
2SA1384
2SA1384
High Voltage Control Applications
Plasma Display, Nixie Tube Driver Applications
Cathode Ray Tube Brightness Control Applications
Unit: mm
• High voltage: VCBO = −300 V, VCEO = −300 V
• Low saturation voltage: VCE (sat) = −0.5 V (max)
• Small collector output capacitance: Cob = 6 pF (typ.)
• Complementary to 2SC3515
• Small flat package
• PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
VCBO
−300
V
VCEO
−300
V
VEBO
−8
V
IC
−100
mA
IB
−20
mA
PC
500
PC
mW
1000
(Note 1)
PW-MINI
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
Note 1: 2SA1384 mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09
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