A1146 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

A1146

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

Product Specification

2SA1146

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

V(BR)EBO Emitter-base breakdown voltage

IE=-1mA ,IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

hFE-1

DC current gain

VCB=-140V; IE=0

VEB=-5V; IC=0

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-4A ; VCE=-5V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

MIN TYP. MAX UNIT

-140

V

-5

V

-2.0

V

-10 μA

-10 μA

55

160

35

70

MHz

2

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