A1142 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

A1142

Silicon PNP Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEsat Collector-emitter saturation voltage IC=-50mA; IB=-5mA

VBEsat Base-emitter saturation voltage

IC=-50mA; IB=-5mA

ICBO

Collector cut-off current

VCB=-180V; IE=0

IEBO

Emitter cut-off current

VEB=-3V; IC=0

hFE-1

DC current gain

IC=-1mA ; VCE=-5V

hFE-2

DC current gain

IC=-10mA ; VCE=-5V

fT

Transition frequency

IC=-20mA ; VCE=-10V

Cob

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

‹ hFE-2 Classifications

O

Y

100-200

160-320

Product Specification

2SA1142

MIN TYP. MAX UNIT

-0.16 -0.5

V

-0.8 -1.5

V

-1

μA

-1

μA

90 200

100 200 320

180

MHz

4.5

pF

2

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