2SA1194K Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SA1194K

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1194(K)

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO –60 —

voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector to emitter saturation

voltage

I CBO

I EBO

hFE

VCE(sat)

—

—

—

—

1000 —

—

—

Base to emitter saturation

VBE(sat)

—

—

voltage

Turn on time

Turn off time

Note: 1. Pulse test

t on

—

0.7

t off

—

0.8

Max Unit

—

V

–1.0 µA

–1.0 µA

—

–2.0 V

–2.0 V

—

µs

—

µs

Test conditions

IC = –1 mA, RBE = ∞

VCB = –60 V, IE = 0

VEB = –7 V, IC = 0

VCE = –3 V, IC = –500 mA*1

IC = –500 mA, IB = –1 mA*1

IC = –500 mA

IB1 = –IB2 = –1 mA

Maximum Collector Dissipation Curve

12

8

4

0

50

100

150

Case Temperature TC (°C)

Area of Safe Operation

–10

–3 iC (peak)

IC (max) PW = 10 ms (1 Shot)

–1.0

–0.3

(T DC

C=

2O5p°eCr)ation

–0.1

–0.03

Ta = 25°C

–0.01

–0.1 –0.3 –1.0 –3

–10 –30 –100

Collector to emitter Voltage VCE (V)

2

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