2N6763 Просмотр технического описания (PDF) - New Jersey Semiconductor

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2N6763

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

New Jersey Semiconductor 

2N6763, 2N6764

ELECTRICAL CHARACTERISTICS © Tc • 26" C (Unton OtlMfwtt*} Specified)

ftrtHIKH

1yp«

Win.

&VOSS Drlin - Sowm Brwkdcwm VoltlBi 2NS763 60

2N«7«4 100

vGS(th) Giw Thrrtiold Voltljl

ALL

2.0'

TVP.

-

-

-

Mn.

-

-

4.0'

Uniti

V

V

V

THt CoAdttiom

VGS-«

IQ - 1 ,0 mA

VDS-VOS, lD-lmA

'OSSF G>n ~ 8odV Lnhigl Foivwd

JILL

-

-

100'

nA VGS - 20V

'GSSR Q<" - §odv LMkijl R«wn»

ALL

-

-

1 CO- nA VQS - -20V

'OSS Z"Q G"* Vol«t» D'«'" Currant

-

0.1

LO"

rnA VDS - M». Rning, Voj - 0

ALL

-

0.2

4.0-

mA Vug . M,«. R«in«. VG$ • 0. Tc - 125°C

vOS(onl Slit* Driin-Sourw On-Stiti

"oS(on) Swtic Drtin-Sourw On*SUtt«

Rnlltintil ^7}

RDSIon) Stltie Oriin-Sourot On-Stit*

jfi

Fonwd TrinKonducWKt Q

2NB763

-

2NB764

-

2N«7«3

-

2NS764

-

2NB7B3 -

2NS784

-

ALL

9.0"

-

-

o.oa

0.045

-

-

12.5

2.48'

2.09-

0.08'

0.056'

0.136-

0.094*

27-

V

V

n

n

n

n

SIUI

VGS-'0VI0-31A

VGS-10V, ID-38A

VGS - 10V, lo - ZOA

VGS • 10V. ID • 24A

VQS - 10V, ID - 30A. TC - 12S°C

VGS - 10V, ID - S4A. Tc > 12S°C

V(>S= 15V, I D - 2 4 A

C|H

^OM

C^

Input Cipicitinci

Output C«p*cilinci

R«vMf« Tr«nif«r CcpKJMnc*

ALL 1000- 2000 3000- of

ALL

500* 1000 isoo-

pp

VGS • 0, VDS • 25 V, t • 1 .0 MH1

ALL

150'

350 500-

pf Swf»«. 10

'd lonl T«fn-0n D«l«v Tirrw

I, ftiM Tim«

'd (til} Tuni-OII D«I»Y Tim»

ALL

-

-

36-

n»

VOD a MV. ID - 24A. Z0 = 4 70

_

ALL

-

100-

m (SwRgi. 13wd14l

ALL

-

-

125-

n« (MOSFET mitehin) tiirm trt nwoidiy

t,

Fill TiifH

ALL L_^__ -

100-

n inOWtridtnt ol O0*r«in« nniMriluri.l

THERMAL RESISTANCE

nlhJC Junction-to-Ctt*

R^^S CaH-to-Sinh

RthjA junclion-to-AmbJ«nt

ALL

-

- 0.83* •c/w

ALL

-

0.1

- •c/w Mounting wrlm flit, tmoolh. >ntl gruHd.

ALL

-

-

30 •c/w Fri« Air Opvntion

BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS

1$

*SM

Vso

Cofttimjoui Sourc* Cwrrtnt

(Body Diod.l

PulMd Scurci Currant

IBodv Diod.l

Diodi Forward Volugl Q

trr

QnR

RVVVTH ft*eov*ry Tim*

R*vw fticowld Chirac

2N6763 -

-

31-

A

2N»764 -

-

38-

2N8763 -

2N0764 -

-

60

-

70

A

2NS763 0.9O- -

1.8*

V

2N3764 0.95- -

1.9-

V

tLL

-

500

-

ni

ALL

-

10

-

uC

•JtDECr««iitir*dvilu« 0 PulMTnt: Puitt Width < 300 WMC, Duty Cyell < 2»

Modifiid MOSFET lymtel

ihowin* thi inugnl

)D

/1 1— -

G»4S s

TC»25°C.IS- 31A.VQS-0

Tc . 25"C. ls - 38A. VOS - 0

TJ * i$o°c, if • ISM, aif/ai • too A/MI

Tj - 160°C, IF- ISM. alF/ai- 100 A/wi

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