2N6788 Просмотр технического описания (PDF) - Microsemi Corporation
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2N6788 Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) (Cont.)
Parameters / Test Conditions
OFF CHARACTERTICS
Drain Current
VGS = 0V, VDS = 80V
VGS = 0V, VDS = 80V, Tj = +125°C
Static Drain-Source On-State Resistance
VGS = 10V, ID = 3.5A pulsed
VGS = 10V, ID = 2.8A pulsed
VGS = 10V, ID = 6.0A pulsed
VGS = 10V, ID = 4.5A pulsed
Tj = +125°C
VGS = 10V, ID = 3.5A pulsed
VGS = 10V, ID = 2.8A pulsed
Diode Forward Voltage
VGS = 0V, ID = 6.0A pulsed
VGS = 0V, ID = 4.5A pulsed
Symbol
2N6788
2N3788U
2N6788
2N3788U
2N6788
2N3788U
2N6788
2N3788U
IDSS1
IDSS2
rDS(on)1
rDS(on)2
rDS(on)3
VSD
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VDS = 50V
VGS = 10V, ID = 6.0A
VGS = 10V, ID = 4.5A
2N6788
2N3788U
Symbol
Qg(on)
Qgs
Qgd
Min.
Min.
Max. Unit
25 µAdc
0.25 mAdc
0.30
Ω
0.35
Ω
0.54
Ω
1.8
Vdc
Max. Unit
18.0
4.0
nC
9.0
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
ID = 6.0A, VGS = 10Vdc
ID = 4.5A, VGS = 10Vdc
Gate drive impedance = 7.5Ω,
VDD = 35Vdc
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 6.0A
IF = 4.5A
2N6788
2N3788U
2N6788
2N3788U
Symbol Min. Max. Unit
td(on)
tr
td(off)
tf
trr
40
70
ns
40
70
240
ns
T4-LDS-0164 Rev. 1 (100553)
Page 2 of 4
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