2N6784_ Просмотр технического описания (PDF) - Microsemi Corporation
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2N6784_ Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 2.25A
VDS = 100V
Symbol
Qg(on)
Qgs
Qgd
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
ID = 2.25A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 100Vdc
Symbol
td(on)
tr
td(off)
tf
Diode Reverse Recovery Time
di/dt ≤ 100A/µs, VDD ≤ 50V,
IF = 2.25A
trr
Min.
Min.
Max.
Unit
8.6
1.5
nC
5.5
Max.
Unit
15
20
ns
30
20
350
ns
T4-LDS-0176 Rev. 1 (101183)
Page 2 of 4
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