2N6782U Просмотр технического описания (PDF) - Microsemi Corporation
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2N6782U Datasheet PDF : 4 Pages
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6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
Gate to Source Charge
Gate to Drain Charge
VGS = 10V, ID = 3.5A
VDS = 50V
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Switching time tests:
Turn-on delay time
Rinse time
Turn-off delay time
Fall time
Diode Reverse Recovery Time
ID = 3.5A, VGS = 10Vdc,
Gate drive impedance = 7.5Ω,
VDD = 50Vdc
di/dt ≤ 100A/µs, VDD ≤ 50V, ID = 3.5A
IF = 3.5A
Symbol
Qg(on)
Qgs
Qgd
Symbol
td(on)
tr
td(off)
tf
trr
Min.
Min.
Max.
Unit
8.1
1.7
nC
4.5
Max.
Unit
15
25
ns
25
20
180
ns
T4-LDS-0064 Rev. 2 (110115)
Page 2 of 4
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