2N6790 Просмотр технического описания (PDF) - Fairchild Semiconductor
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2N6790 Datasheet PDF : 7 Pages
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2N6790
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
2N6790
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
200
V
Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR
200
V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
3.5
A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
2.25
A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
14
A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
±20
V
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
3.5
A
Pulse Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
14
A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Above TC = 25oC, Derate Linearly . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
20
0.16
-55 to 150
W
W/oC
oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
300
oC
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
260
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On-Voltage (Note 2)
Drain to Source On Resistance
BV DSS
VGS(TH)
IDSS
IGSS
V DS(ON)
rDS(ON)
ID = 0.25mA, VGS = 0V
VGS = VDS, ID = 1.0mA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V
VGS = ±20V, VDS = 0
ID = 3.5A, VGS = 10V
ID = 2.25A, VGS = 10V
ID = 2.25A, VGS = 10V
200
2
-
TC = 125oC
-
-
-
-
TC = 125oC
-
-
-
V
-
4
V
-
250
µA
-
1000
µA
-
100
nA
-
2.8
V
.5 0.800
Ω
-
1.5
Ω
Diode Forward Voltage
Forward Transconductance (Note 2)
Input Capacitance
Output Capacitance
V SD
g fs
CISS
COSS
IS = 3.5A, VGS = 0V
ID = 2.25A, VDS = 5V
VGS = 0V, VDS = 25V
f = 1MHz
0.7
-
1.5
V
1.5 2.25 4.5
S
200 450 600
pF
60
150 300
pF
Reverse-Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Safe Operating Area
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C RSS
td(ON)
tr
td(OFF)
tf
SOA
RθJC
R θ JA
ID = 2.25A
VGS ≅ 74V, RG = 50Ω
VDS = 160V, ID = 125mA
VDS = 5.7V, ID = 3.5A
Free Air Operation
15
40
80
pF
-
-
40
ns
-
-
50
ns
-
-
50
ns
-
-
50
ns
20
-
-
W
20
-
-
W
-
-
6.25 oC/W
-
-
175
oC/W
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX
Reverse Recovery Time
Reverse Recovered Charge
trr
Q RR
TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs
TJ = 150oC, ISD = 3.5A, dlSD/dt = 100A/µs
350
-
2.3
-
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
UNITS
ns
µC
©2001 Fairchild Semiconductor Corporation
2N6790 Rev. B
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