2N6247 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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2N6247 Datasheet PDF : 3 Pages
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Product Specification
Silicon PNP Power Transistors
www.jmnic.com
2N6246 2N6247 2N6248
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Excellent safe operating area
·High gain at high current
APPLICATIONS
·General-purpose types of switching
and linear-amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
2N6246
VCBO
Collector-base voltage 2N6247
2N6248
2N6246
VCEO
Collector-emitter voltage 2N6247
2N6248
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
70
90
110
60
80
100
5
15
5
125
150
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
1.4
UNIT
℃/W
JMnic
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