IRFD210 Просмотр технического описания (PDF) - Intersil

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IRFD210

0.6A, 200V, 1.500 Ohm, N-Channel Power MOSFET

Intersil 

IRFD210

Source to Drain Diode Specifications

PARAMETER

Continuous Source to Drain Current

Pulse Source to Drain Current

SYMBOL

TEST CONDITIONS

ISD

ISDM

Modified MOSFET Symbol

Showing the Integral

Reverse P-N Junction

D

Diode

G

S

Source to Drain Diode Voltage (Note 2)

Reverse Recovery Time

Reverse Recovery Charge

VSD

trr

QRR

TJ = 25oC, ISD = 0.6A, VGS = 0V (Figure 12)

TJ = 150oC, ISD = 0.6A, dISD/dt = 100A/µs

TJ = 150oC, ISD = 0.6A, dISD/dt = 100A/µs

NOTES:

2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.

3. VDD = 20V, starting TJ = 25oC, L = 112.7µH, RG = 50Ω, peak IAS = 2.2A.

Typical Performance Curves Unless Otherwise Specified

MIN TYP MAX UNITS

-

-

0.6

A

-

-

2.5

A

-

-

2.0

V

-

290

-

ns

-

2.0

-

µC

1.2

1.0

0.8

0.6

0.4

0.2

0

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT

TEMPERATURE

0.6

0.5

0.4

0.3

0.2

0.1

0

25

50

75

100

125

150

TA, AMBIENT TEMPERATURE (oC)

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

AMBIENT TEMPERATURE

10µs

1

100µs

1ms

10ms

0.1

0.01

OPERATION IN THIS

AREA MAY BE

LIMITED BY RDS(ON)

100ms

TJ

TC

=

=

MAX RATED

25oC

SINGLE PULSE

0.001

1

10

DC

100

VDS, DRAIN TO SOURCE VOLTAGE (V)

1000

FIGURE 3. FORWARD BIAS SAFE OPERATING AREA

5

VGS = 10V

PULSE DURATION = 80µs

VGS = 9V

DUTY CYCLE = 0.5% MAX

4

VGS = 8V

VGS = 7V

3

2

VGS = 6V

1

VGS = 5V

VGS = 4V

0

0

10

20

30

40

50

VDS, DRAIN TO SOURCE VOLTAGE (V)

FIGURE 4. OUTPUT CHARACTERISTICS

4-283

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