2N2906AUB Просмотр технического описания (PDF) - Semicoa Semiconductor

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2N2906AUB

Silicon PNP Transistor

Semicoa Semiconductor 

Description

Semicoa Semiconductors offers:

• Screening and processing per MIL-PRF-19500 Appendix E

• JAN level (2N2906AUBJ)

• JANTX level (2N2906AUBJX)

• JANTXV level (2N2906AUBJV)

• JANS level (2N2906AUBJS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

Please contact Semicoa for special configurations

www.SEMICOA.com or (714) 979-1900

Absolute Maximum Ratings

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current, Continuous

Power Dissipation, TA = 25OC

Derate linearly above 37.5 OC

Thermal Resistance

Operating Junction Temperature

Storage Temperature

Symbol

VCEO

VCBO

VEBO

IC

PT

RθJA

TJ

TSTG

2N2906AUB

Silicon PNP Transistor

Data Sheet

Applications

• General purpose

• Low power

• PNP silicon transistor

Features

• Hermetically sealed Cersot ceramic

• Also available in chip configuration

• Chip geometry 0600

• Reference document:

MIL-PRF-19500/291

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

• Radiation testing available

TC = 25°C unless otherwise specified

Rating

Unit

60

Volts

60

Volts

5

Volts

600

mA

0.5

W

3.08

mW/°C

325

°C/W

-65 to +200

°C

-65 to +200

°C

Copyright 2002

Rev. K

Semicoa Semiconductors, Inc.

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

www.SEMICOA.com

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