IRFF210 Просмотр технического описания (PDF) - Intersil
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IRFF210 Datasheet PDF : 7 Pages
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IRFF210
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRFF210
200
200
2.2
9.0
± 20
15
0.12
30
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA (Figure 10)
200
Gate to Threshold Voltage
VGS(TH) VGS = VDS, ID = 250µA
2.0
Zero-Gate Voltage Drain Current
IDSS VDS = Rated BVDSS, VGS = 0V
-
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
On-State Drain Current (Note 2)
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) 2.2
Gate to Source Leakage Forward
IGSS VGS = ±20V
-
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 1.25A (Figures 8, 9)
-
Forward Transconductance (Note 2)
gfs
VGS > ID(ON) rDS(ON)MAX, ID = 1.25A (Figure 12)
0.8
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(ON) ID ≈ 2.2A, RG = 9.1Ω, VGS = 10V,
-
tr
RL = 33Ω for VDS = 75V,
RL = 44Ω for VDS = 100V,
-
td(OFF) VDD ≈ 0.5BVDSS (Figures 15, 16) MOSFET
-
tf
Switching Times are Essentially Independent of
-
Operating Temperature
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Output Capacitance
Reverse to Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
Qg(TOT) VGS = 10V, ID = 2.2A, VDS = 0.8 x Rated BVDSS,
-
IG(REF) = 1.5mA (Figures 14, 19, 20) Gate Charge
Qgs
is Essentially Independent of Operating
Temperature
-
Qgd
-
CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11)
-
COSS
-
CRSS
-
LD
Measured from the Drain Modified MOSFET
-
Lead, 5mm (0.2in) from Symbol Showing the
Header to Center of Die Internal Device
LS
Measured from the
Source Lead, 5mm
Inductances
D
-
(0.2in) from Header to
LD
Source Bonding Pad
G
LS
Junction to Case
Junction to Ambient
RθJC
RθJA
Free Air Operation
S
-
-
TYP
-
-
-
-
-
-
1.0
1.3
8
15
10
8
5.0
2.0
3.0
135
60
16
5.0
15
-
-
MAX
-
4.0
25
250
-
±100
1.500
-
15
25
15
15
UNITS
V
V
µA
µA
A
nA
Ω
S
ns
ns
ns
ns
7.5
nC
-
nC
-
nC
-
pF
-
pF
-
pF
-
nH
-
nH
8.33
175
oC/W
oC/W
2
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