1R5NH45 Просмотр технического описания (PDF) - Toshiba
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1R5NH45 Datasheet PDF : 4 Pages
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1R5NH45
TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE
1R5NH45
SWITCHING MODE POWER SUPPLY APPLICATIONS
Unit: mm
z Repetitive Peak Reverse Voltage
z Average Forward Current
z Very Fast Reverse−Recovery Time
: VRRM = 1000V
: IF (AV) = 1.5A
: trr = 200ns (Max)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
1000
V
Average Forward Current
(Ta = 25°C)
IF (AV)
1.5
A
Peak One Cycle Surge Forward
Current (Non−Repetitive)
IFSM
30 (50Hz)
A
33 (60Hz)
Junction Temperature Range
Tj
−40~150
°C
Storage Temperature Range
Tstg
−40~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
3−4B1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.47g
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
Peak Forward Voltage
Repetitive Peak Reverse
Current
Reverse Recovery Time
Forward Recovery Time
Thermal Resistance
SYMBOL
TEST CONDITION
VFM
IFM = 1.5A
IRRM
VRRM = 1000V
trr
tfr
Rth (j−a)
IF = 1A, di / dt = −30A / µs
IF = 1.0A
Junction to Ambient
MIN TYP. MAX UNIT
―
―
1.5
V
―
― 100 µA
―
― 200 ns
―
― 750 ns
―
―
58 °C / W
MARKING
Part No. (or abbreviation code)
Lot No.
Abbreviation Code
NH5
Part No.
1R5NH45
NH5
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-07
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