1N3295R Просмотр технического описания (PDF) - Microsemi Corporation
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1N3295R Datasheet PDF : 3 Pages
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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
Qualified per MIL-PRF-19500/246
• Glass Passivated Die • Glass to Metal Header Construction
• VRRM to 1000V • 1600 Amps Surge Rating
DEVICES
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Repetitive Reverse Voltage
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289R
1N3291R
1N3293R
1N3294R
1N3295R
Average Forward Current, TC = 134°
Peak Surge Forward Current @ tp = 8.3ms, half sinewave,
TC = 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
Symbol
VRWM
IF
IFSM
RθJC
Tj
TSTG
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Value
200
400
600
800
1000
100
1600
0.4
-65°C to 200°C
-65°C to 200°C
Parameters / Test Conditions
Forward Voltage
IFM = 310A, TC = 25°C *
Reverse Current
VRM = 200, TC = 25°C
VRM = 400, TC = 25°C
VRM = 600, TC = 25°C
VRM = 800, TC = 25°C
VRM = 1000, TC= 25°C
Reverse Current
VRM = 200, TC = 200°C
VRM = 400, TC = 200°C
VRM = 600, TC = 200°C
VRM = 800, TC = 200°C
VRM = 1000, TC = 200°C
1N3289
1N3291
1N3293
1N3294
1N3295
1N3289
1N3291
1N3293
1N3294
1N3295
* Pulse test: Pulse width 300μsec. Duty cycle 2%
Note:
Symbol
VFM
1N3289R
1N3291R
1N3293R
IRM
1N3294R
1N3295R
1N3289R
1N3291R
1N3293R
IRM
1N3294R
1N3295R
Min.
Max.
1.55
10
30
Unit
V
A
A
°C/W
°C
°C
Unit
V
mA
mA
DO-205AA (DO-8)
T4-LDS-0142 Rev. 1 (091785)
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