1MBI200HH-120L-50 Просмотр технического описания (PDF) - Fuji Electric
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1MBI200HH-120L-50 Datasheet PDF : 7 Pages
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1MBI200HH-120L-50
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage (typ.)
Tj=25°C / chip
500
15V 12V
400
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector current vs. Collector-Emitter voltage (typ.)
VGE=15V / chip
500
400
Tj=25°C Tj=125°C
300
200
100
0
0
1
2
3
4
5
6
7
Collector-Emitter voltage : VCE [ V ]
Capacitance vs. Collector-Emitter voltage (typ.)
VGE=0V, f=1MHz, Tj=25°C
100.0
Cies
10.0
Coes
1.0
Cres
0.1
0
10
20
Collector-Emitter voltage : VCE [ V ]
30
3
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Collector current vs. Collector-Emitter voltage (typ.)
Tj=125°C / chip
500
15V 12V
400
VGE=20V
10V
300
200
8V
100
0
012345678
Collector-Emitter voltage : VCE [ V ]
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Tj=25°C / chip
10
8
6
4
IC=400A
IC=200A
2
IC=100A
0
5
10
15
20
25
Gate-Emitter voltage : VGE [ V ]
Dynamic Gate charge (typ.)
VCC=600V, IC=200A, Tj=25oC
VCE
VGE
0
200
400
600
Gate charge : Qg [ nC ]
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