VS-11DQ09 Просмотр технического описания (PDF) - Vishay Semiconductors
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VS-11DQ09 Datasheet PDF : 6 Pages
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VS-11DQ09, VS-11DQ09-M3, VS-11DQ10, VS-11DQ10-M3
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.85
0.96
0.68
0.78
0.5
1.0
35
8.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
junction to lead
RthJA
RthJL
DC operation
Without cooling fin
DC operation
See fig. 4
Approximate weight
Marking device
Case style DO-204AL (DO-41)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
UNITS
°C
100
°C/W
81
0.33
g
0.012
oz.
11DQ09
11DQ10
Revision: 21-Sep-11
2
Document Number: 93207
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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