LE28CV1001M-12 Просмотр технического описания (PDF) - SANYO -> Panasonic

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LE28CV1001M-12

1MEG (131072 words × 8 bits) Flash Memory

SANYO -> Panasonic 

Block Diagram

LE28CV1001M, T-12/15

Pin Assignments

Pin Functions

Symbol

A16 to A0

Pin

Address input

DQ7 to DQ0 Data input and output

CE

OE

WE

VDD

VSS

N.C.

Chip enable

Output enable

Write enable

Power supply

Ground

No connection

Function

Supply the memory address to these pins.

The address is latched internally during a write cycle.

These pins output data during a read cycle and input data during a write cycle.

Data is latched internally during a write cycle.

Outputs go to the high-impedance state when either OE or CE is high.

The device is active when CE is low.

When CE is high, the device becomes unselected and goes to the standby state.

Makes the data output buffers active.

OE is a low-active input.

Makes the write operation active.

WE is an active-low input.

Apply 3.3 V ±0.3 to this pin.

These pins must be left open.

No. 5409-2/14

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