HN58V1001P-25 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58V1001P-25

1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

Hitachi -> Renesas Electronics 

HN58V1001 Series

Absolute Maximum Ratings

Parameter

Symbol

Value

Unit

Supply voltage relative to VSS

Input voltage relative to VSS

Operating temperature range*2

VCC

–0.6 to +7.0

V

Vin

–0.5*1 to +7.0

V

Topr

0 to +70

°C

Storage temperature range

Tstg

–55 to +125

°C

Notes: 1. Vin min = –3.0 V for pulse width ≤ 50 ns

2. Including electrical characteristics and data retention

Recommended DC Operating Conditions

Parameter

Symbol

Supply voltage

Input voltage

Operating temperature

VCC

VSS

VIL

VIH

VH

Topr

Notes: 1. VIL (min): –1.0 V for pulse width ≤ 50 ns

2. VIH (min): 2.2 V for VCC = 3.6 to 5.5 V

Min

Typ

2.7

3.0

0

0

–0.3*1

—

1.9*2

—

Vcc – 0.5 —

0

—

Max

5.5

0

0.8

VCC + 0.3

VCC + 1.0

70

Unit

V

V

V

V

V

°C

DC Characteristics (Ta = 0 to +70 °C, VCC = 2.7 V to 5.5 V)

Parameter

Symbol Min

Typ

Input leakage current ILI

—

—

Output leakage current ILO

—

—

Standby VCC current

I CC1

—

—

I CC2

—

—

Operating VCC current ICC3

—

—

—

—

Output low voltage

VOL

—

—

Output high voltage

VOH

VCC × 0.8 —

Notes: 1. ILI on RES: 100 µA (max)

Max

2*1

2

20

1

6

15

0.4

—

Unit

µA

µA

µA

mA

mA

mA

V

V

Test conditions

VCC = 3.6 V, Vin =3.6 V

VCC = 3.6 V, Vout = 3.6/0.4 V

CE = VCC

CE = VIH

Iout = 0 mA, Duty = 100%,

Cycle = 1 µs at VCC = 3.3 V

Iout = 0 mA, Duty = 100%,

Cycle = 250 ns at VCC = 3.3 V

IOL = 2.1 mA

IOH = –400 µA

4

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