HN58V1001T-25 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58V1001T-25

1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

Hitachi -> Renesas Electronics 

HN58V1001 Series

Write/Erase Endurance and Data Retention Time

The endurance is 104 cycles in case of the page programming and 103 cycles in case of the byte programming

(1% cumulative failure rate). The data retention time is more than 10 years when a device is page-

programmed less than 104 cycles.

Data Protection

1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation

During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to

programming mode by mistake.

To prevent this phenomenon, this device has a noise cancellation function that cuts noise if its width is 20 ns

or less in program mode.

Be careful not to allow noise of a width of more than 20 ns on the control pins.

WE

CE

VIH

0V

VIH

OE

0V

20 ns max

16

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