HN58C1001P-15 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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HN58C1001P-15

1M EEPROM (128-kword × 8-bit) Ready/Busy and RES function

Hitachi -> Renesas Electronics 

HN58C1001 Series

Capacitance (Ta = 25°C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Input capacitance*1

Cin

—

—

6

Output capacitance*1

Cout

—

—

12

Note: 1. This parameter is periodically sampled and not 100% tested.

Unit Test conditions

pF Vin = 0 V

pF Vout = 0 V

AC Characteristics (Ta = 0 to +70 °C, VCC = 5.0 V ± 10%)

Test Conditions

• Input pulse levels: 0.4 V to 2.4 V

0 V to VCC (RES pin)

• Input rise and fall time: 20 ns

• Output load: 1TTL Gate +100 pF

• Reference levels for measuring timing: 0.8 V, 2.0 V

Read Cycle

Parameter

Address to output delay

CE to output delay

OE to output delay

Address to output hold

OE (CE) high to output float*1

RES low to output float*1

RES to output delay

Symbol

t ACC

t CE

t OE

t OH

t DF

t DFR

t RR

HN58C1001-15

Min

Max

—

150

—

150

10

75

0

—

0

50

0

350

0

450

Unit

ns

ns

ns

ns

ns

ns

ns

Test conditions

CE = OE = VIL, WE = VIH

OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

CE = OE = VIL, WE = VIH

5

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