1N5400G Просмотр технического описания (PDF) - ON Semiconductor
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1N5400G Datasheet PDF : 6 Pages
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1N5400 thru 1N5408
MAXIMUM RATINGS
Rating
Symbol 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
50
100
200
400
600
800
1000
V
VRWM
VR
Non−repetitive Peak Reverse Voltage VRSM
100
200
300
525
800
1000 1200
V
Average Rectified Forward Current
IO
3.0
A
(Single Phase Resistive Load,
1/2 in. Leads, TL = 105°C)
Non−repetitive Peak Surge Current
IFSM
200 (one cycle)
A
(8 ms Single Half−Sine−Wave)
Operating and Storage Junction
TJ
− 65 to +150
°C
Temperature Range
Tstg
− 65 to +175
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Unit
Thermal Resistance, Junction−to−Ambient (PC Board Mount, 1/2 in. Leads)
RqJA
53
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Forward Voltage (IF = 3.0 A, TA = 25°C)
Reverse Current (Rated DC Voltage)
TA = 25°C
TA = 100°C
Ratings at 25°C ambient temperature unless otherwise specified.
60 Hz resistive or inductive loads.
For capacitive load, derate current by 20%.
Symbol Min
Typ
Max
Unit
vF
−
−
1.0
V
IR
mA
−
−
10
−
−
50
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