2SD870 Просмотр технического описания (PDF) - SavantIC Semiconductor

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2SD870

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD870

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200m A;IC=0

VCEsat Collector-emitter saturation voltage IC=4 A;IB=0.8 A

VBEsat

Base-emitter saturation voltage

ICBO

Collector cut-off current

hFE

DC current gain

VF

Diode forward voltage

IC=4 A;IB=0.8 A

VCB=500V;IE=0

IC=1A ; VCE=5V

IF=5A

fT

Transition frequency

IC=0.1A ; VCE=10V

COB

Collector output capacitance

tf

Fall time

IE=0 ; VCB=10V;f=1MHz

IC=4A;IB1end=0.8A

MIN TYP. MAX UNIT

5

V

5.0

V

1.5

V

10

µA

8

2.0

V

3

MHz

165

pF

1.0

µs

2

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