2SC2310 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2310

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC458 (LG), 2SC2310

Electrical Characteristics (Ta = 25°C)

2SC458 (LG)

2SC2310

Item

Symbol Min Typ Max Min Typ Max Unit Test conditions

Collector to base

breakdown voltage

V(BR)CBO

30

—

—

55

—

—V

IC = 10 µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

30

—

—

50

—

—V

IC = 1 mA, RBE = ∞

Emitter to base

breakdown voltage

V(BR)EBO

5

—— 5

— —V

IE = 10 µA, IC = 0

Collector cutoff current ICBO

Emitter cutoff current IEBO

DC current transfer ratio hFE*1

Collector to emitter

saturation voltage

VCE(sat)

——

——

100 —

——

0.5 — —

0.5 — —

500 100 —

0.2 — —

0.5 µA

0.5 µA

320

0.2 V

VCB =18 V, IE = 0

VEB = 2 V, IC = 0

VCE = 12 V, IC = 2 mA

IC = 10 mA, IB = 1 mA

Base to emitter voltage VBE

Gain bandwidth product fT

Collector output

Cob

capacitance

— 0.67 0.75 — 0.67 0.75 V

VCE = 12 V, IC = 2 mA

— 230 — — 230 — MHz VCE = 12 V, IC = 2 mA

— 1.8 3.5 — 1.8 3.5 pF VCB = 10 V, IE = 0,

f = 1 MHz

Noise figure

NF

—3

5

—3

5

dB VCE = 6 V, IC = 0.1 mA,

f = 120 Hz, Rg = 500 Ω

Small signal input

hie

impedance

— 16.5 — — 16.5 — kΩ VCE = 5V, IC = 0.1mA,

f = 270 Hz

Small signal voltage hre

feedback ratio

—

70 —

—

70

—

× 10–6

Small signal current

hfe

transfer ratio

— 130 — — 130 —

Small signal output

hoe

admittance

— 11.0 — — 11.0 — µS

Note: 1. The 2SC458 (LG) and 2SC2310 are grouped by hFE as follows.

B

C

D

2SC458 (LG) 100 to 200 160 to 320 250 to 500

2SC2310 100 to 200 160 to 320 —

3

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