K3155 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K3155

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3155

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS = 100 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

ADE-208-768C (Z)

4th. Edition

February 1999

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