2SK2929 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK2929

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK2929

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS =0.026 Ω typ.

• High speed switching

• 4V gate drive device can be driven from 5V source

Outline

TO–220AB

ADE-208-552C (Z)

4th. Edition

June 1, 1998

D

G

S

1

2

3

1. Gate

2. Drain(Flange

3. Source

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