K2568 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

Список матч

K2568

Silicon N-Channel MOS FET / 2SK2568

Hitachi -> Renesas Electronics 

2SK2568

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown

voltage

V(BR)DSS

500

Gate to source breakdown

voltage

V(BR)GSS

±30

Gate to source leak current IGSS

—

Zero gate voltage drain current IDSS

—

Gate to source cutoff voltage VGS(off)

2.0

Static drain to source on state RDS(on)

—

resistance

Forward transfer admittance |yfs|

6.0

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note: 1. Pulse Test

Typ Max Unit

—

—

V

—

—

V

—

±10 µA

—

250 µA

—

3.0 V

0.5

0.6

Ω

10

—

S

1560 —

pF

450 —

pF

72

—

pF

22

—

ns

78

—

ns

140 —

ns

60

—

ns

1.1

—

V

105 —

ns

Test Conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 6 A

VGS = 10 V*1

ID = 6 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 6 A

VGS = 10 V

RL = 5 Ω

IF = 12 A, VGS = 0

IF = 12 A, VGS = 0

diF / dt = 100 A / µs

3

Share Link: