K1170 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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K1170

Silicon N-Channel MOS FET / 2SK1169, 2SK1170

Hitachi -> Renesas Electronics 

2SK1169, 2SK1170

Absolute Maximum Ratings (Ta = 25°C)

Item

Drain to source voltage

2SK1169

2SK1170

Gate to source voltage

Drain current

Drain peak current

Body to drain diode reverse drain current

Channel dissipation

Channel temperature

Storage temperature

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at TC = 25°C

Symbol

VDSS

VGSS

ID

I *1

D(pulse)

I DR

Pch*2

Tch

Tstg

Ratings

Unit

450

V

500

±30

V

20

A

80

A

20

A

120

W

150

°C

–55 to +150

°C

2

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