C3510 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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C3510 Datasheet PDF : 10 Pages
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2SC3127, 2SC3128, 2SC3510
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown
voltage
V(BR)CBO
20
Collector to emitter breakdown V(BR)CEO 12
voltage
Emitter cutoff current
I EBO
—
Collector cutoff current
I CBO
—
DC current transfer ratio
hFE
30
Collector output capacitance Cob
—
Gain bandwidth product
Power gain
fT
3.5
PG
—
Noise figure
NF
—
Typ Max Unit
—
—
V
—
—
V
—
10
—
0.5
90
200
0.9 1.5
4.5 —
10.5 —
µA
µA
pF
GHz
dB
2.2 —
dB
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
VEB = 3 V, IC = 0
VCB = 12 V, IE = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Maximum Collector Dissipation Curve
600
2SC3510
400
2SC3128
200
2SC3127
0
50
100
150
200
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
200
VCE = 5 V
160
120
80
40
0
12
5 10 20
50 100
Collector Current IC (mA)
3
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