2SC2610 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SC2610

Silicon NPN Triple Diffused

Hitachi -> Renesas Electronics 

2SC2610

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

300

V

300

V

5

V

100

mA

800

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 300 —

voltage

Collector to emitter breakdown V(BR)CEO 300 —

voltage

Emitter to base breakdown

V(BR)EBO

5

—

voltage

Collector cutoff current

I CEO

—

—

DC current transfer ratio

hFE

30

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

50

80

Collector output capacitance Cob

—

—

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1.0 µA

200

1.5 V

VCE = 250 V, RBE = ∞

VCE = 20 V, IC = 20 mA

IC = 20 mA, IB = 2 mA

—

MHz VCE = 20 V, IC = 20 mA

4.0 pF

VCB = 20 V, IE = 0, f = 1 MHz

2

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