2SA1122 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SA1122

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SA1122

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–55

V

–55

V

–5

V

–100

mA

150

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –55 —

voltage

Collector to emitter breakdown V(BR)CEO –55 —

voltage

Emitter to base breakdown

V(BR)EBO

–5

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

160 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Note: 1. The 2SA1122 is grouped by hFE as follows.

Grade

B

C

D

Mark

CC

CD

CE

hFE

160 to 320 250 to 500 400 to 800

Max Unit

—

V

—

V

—

V

–0.5 µA

–0.5 µA

800

–0.5 V

–0.75 V

Test conditions

IC = –10 µA, IE = 0

IC = –1 mA, RBE = ∞

IE = –10 µA, IC = 0

VCB = –30 V, IE = 0

VEB = –2 V, IC = 0

VCE = –12 V, IC = –2 mA

IC = –10 mA, IB = –1 mA

VCE = –12 V, IC = –2 mA

See characteristic curves of 2SA836.

2

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