B647A Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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B647A Datasheet PDF : 6 Pages
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2SB647, 2SB647A
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
iC(peak)
PC
Tj
Tstg
2SB647
2SB647A
Unit
–120
–120
V
–80
–100
V
–5
–5
V
–1
–1
A
–2
–2
A
0.9
0.9
W
150
150
°C
–55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SB647
2SB647A
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO –120 — — –120 — — V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO –80 — — –100 — — V
IC = –1 mA, RBE = ∞
Emitter to base breakdown V(BR)EBO –5 — — –5 — — V
voltage
IE = –10 µA, IC = 0
Collector cutoff current
DC current transfer ratio
I CBO
—
hFE1*1
60
hFE2
30
Collector to emitter
saturation voltage
Base to emitter voltage
VCE(sat)
—
VBE
—
Gain bandwidth product fT
—
Collector output capacitance Cob —
— –10 —
— 320 60
— — 30
— –1 —
— –1.5 —
140 — —
20 — —
— –10 µA VCB = –100 V, IE = 0
— 200
VCE = –5 V,
IC = –150 mA*2
——
VCE = –5 V,
IC = –500 mA*2
— –1 V
IC = –500 mA,
IB = –50 mA*2
— –1.5 V
VCE = –5 V,
IC = –150 mA*2
140 — MHz VCE = –5 V, IC = –150 mA
20 — pF VCB = –10 V, IE = 0
f = 1 MHz
Notes: 1. The 2SB647 and 2SB647A are grouped by hFE1 as follows.
2. Pulse test
B
C
D
2SB647
60 to 120 100 to 200 160 to 320
2SB647A 60 to 120 100 to 200 —
2
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