2SD789 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SD789

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SD789

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

100

V

50

V

6

V

1

A

0.9

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO 100 —

voltage

Collector to emitter breakdown V(BR)CEO 50

—

voltage

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

100

Collector output capacitance Cob

—

20

Note: 1. The 2SD789 is grouped by hFE as follows.

B

C

D

E

100 to 200 160 to 320 250 to 500 400 to 800

Max Unit Test conditions

—

V

IC = 10 µA, IE = 0

—

V

IC = 1 mA, RBE = ∞

—

V

IE = 10 µA, IC = 0

1

µA

0.2 µA

800

0.3 V

VCB = 80 V, IE = 0

VEB = 6 V, IC = 0

VCE = 2 V, IC = 0.1A

IC = 1 A, IB = 0.1 A

—

MHz VCE = 2 V, IC = 10 mA

—

pF

VCB = 10 V, IE = 0, f = 1MHz

2

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