C3553 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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C3553

Silicon NPN Epitaxial

Hitachi -> Renesas Electronics 

2SC3553

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

35

V

35

V

4

V

500

mA

300

mW

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown

V(BR)CBO

35

—

voltage

Collector to emitter breakdown V(BR)CEO 35

—

voltage

Emitter to base breakdown

V(BR)EBO

4

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

10

—

Collector to emitter saturation VCE(sat) —

0.2

voltage

Base to emitter voltage

VBE

—

0.64

Notes: 1. The 2SC3553 is grouped by hFE1 as follows.

2. Pulse test

B

C

D

60 to 120 100 to 200 160 to 320

Max

—

—

—

0.5

320

—

0.6

—

Unit

V

V

V

µA

V

V

Test conditions

IC = 10 µA, IE = 0

IC = 1 mA, RBE = ∞

IE = 10 µA, IC = 0

VCB = 20 V, IE = 0

VCE = 3 V, IC = 10 mA

VCE = 3 V, IC = 500 mA*2

IC = 150 mA, IB = 15 mA*2

VCE = 3 V, IC = 10 mA

See characteristic curves of 2SC1213.

2

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