B1059 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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B1059

Silicon PNP Epitaxial

Hitachi -> Renesas Electronics 

2SB1059

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Ratings

Unit

–70

V

–50

V

–6

V

–1

A

0.75

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to base breakdown V(BR)CBO –70 —

voltage

Collector to emitter breakdown V(BR)CEO –50 —

voltage

Emitter to base breakdown

V(BR)EBO

–6

—

voltage

Collector cutoff current

I CBO

—

—

Emitter cutoff current

I EBO

—

—

DC current transfer ratio

hFE*1

100 —

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

65

Collector output capacitance Cob

—

35

Note: 1. The 2SB1059 is grouped by hFE as follows.

B

C

100 to 200 160 to 320

Max Unit Test conditions

—

V

IC = –10 µA, IE = 0

—

V

IC = –1 mA, RBE = ∞

—

V

IE = –10 µA, IC = 0

–1

µA

–0.2 µA

320

–0.6 V

VCB = –55 V, IE = 0

VEB = –6 V, IC = 0

VCE = –2 V, IC = –0.1 A

IC = –1 A, IB = –0.1 A

—

MHz VCE = –2 V, IC = –10 mA

—

pF

VCB = –10 V, IE = 0, f = 1 MHz

See characteristic curves of 2SB740.

2

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