2SK1836 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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2SK1836

Silicon N-Channel MOS FET / High speed power switching

Hitachi -> Renesas Electronics 

2SK1836, 2SK1837

Electrical Characteristics (Ta = 25°C)

Item

Drain to source K1836

breakdown

voltage

K1837

Gate to source breakdown

voltage

Gate to source leak current

Zero gate

K1836

voltage drain

current

K1837

Gate to source cutoff voltage

Static drain to K1836

source on state K1837

resistance

Forward transfer admittance

Symbol Min

V(BR)DSS

450

500

V(BR)GSS

±30

I GSS

—

I DSS

—

VGS(off)

2.0

RDS(on)

—

—

|yfs|

22

Typ Max

—

—

—

—

—

—

—

±10

—

250

—

3.0

0.08 0.10

0.085 0.11

35

—

Input capacitance

Ciss

—

Output capacitance

Coss —

Reverse transfer capacitance Crss

—

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(of f)

—

Fall time

tf

—

Body to drain diode forward VDF

—

voltage

Body to drain diode reverse trr

—

recovery time

Note 1. Pulse Test

8150 —

2100 —

180 —

80

—

250 —

550 —

220 —

1.1

—

620 —

Unit

V

V

µA

µA

V

Ω

S

pF

pF

pF

ns

ns

ns

ns

V

ns

Test conditions

ID = 10 mA, VGS = 0

IG = ±100 µA, VDS = 0

VGS = ±25 V, VDS = 0

VDS = 360 V, VGS = 0

VDS = 400 V, VGS = 0

ID = 1 mA, VDS = 10 V

ID = 25 A

VGS= 10 V*1

ID = 25 A

VDS = 10 V*1

VDS = 10 V

VGS = 0

f = 1 MHz

ID = 25 A

VGS = 10 V

RL = 1.2 Ω

IF = 50 A, VGS = 0

IF = 50 A, VGS = 0,

diF / dt = 100 A / µs

3

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