A1188 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
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A1188 Datasheet PDF : 5 Pages
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2SA1188, 2SA1189
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SA1188
2SA1189
Unit
–90
–120
V
–90
–120
V
–5
–5
V
–100
–100
mA
100
100
mA
400
400
mW
150
150
°C
–55 to +150
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
2SA1188
2SA1189
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
–90 —
—
–120 —
—V
IC = –10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO
–90 —
—
–120 —
—V
IC = –1 mA, RBE = ∞
Emitter to base
breakdown voltage
V(BR)EBO
–5
—
—
–5
—
—V
IE = –10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current trnsfer ratio
I CBO
I EBO
hFE*1
Collector to emitter
saturation voltage
Base to emitter
saturation voltage
VCE(sat)
VBE(sat)
——
——
250 —
–0.1 — —
–0.1 — —
800 250 —
–0.1 µA
–0.1 µA
800
— –0.05 –0.15 — –0.05 –0.15 V
— –0.7 –1.0 — –0.7 –1.0 V
VCB = –70 V, IE = 0
VEB = –2 V, IC = 0
VCE = –12 V,
IC = –2 mA*2
IC = –10 mA,
IB = –1 mA*2
Gain bandwidth product fT
Collector output
Cob
capacitance
— 130 — — 130 — MHz VCE = –6 V,
IC = –10 mA
— 3.2 — — 3.2 — pF VCB = –10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SA1188 and 2SA1189 are grouped by hFE as follows.
2. Pulse test
D
E
250 to 500 400 to 800
See characteristic curves of 2SA1190 and 2SA1191.
2
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