Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source
2SK1517 V(BR)DSS 450
breakdown voltage 2SK1518
500
Gate to source breakdown
voltage
V(BR)GSS
±30
Gate to source leak current IGSS
—
Zero gate voltage 2SK1517 IDSS
—
drain current
2SK1518
Gate to source cutoff voltage VGS(off) 2.0
Static Drain to source 2SK1517 RDS(on) —
on state resistance 2SK1518
—
Forward transfer admittance |yfs|
10
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body to drain diode forward VDF
—
voltage
Body to drain diode reverse trr
—
recovery time
Note 1. Pulse test
Typ Max
—
—
—
—
—
±10
—
250
—
3.0
0.20 0.25
0.22 0.27
16
—
3050 —
940 —
140 —
35
—
130 —
240 —
105 —
1.0 —
120 —
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
2SK1517, 2SK1518
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±25 V, VDS = 0
VDS = 360 V, VGS = 0
VDS = 400 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V *1
ID = 10 A, VDS = 10 V *1
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3 Ω
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0,
diF/dt = 100 A/µs
3